features trenchfet power mosfet: 1.8-v rated new low thermal resistance powerpak package applications load switch SI7973DP vishay siliconix new product document number: 72428 s-32129?rev. a, 27-oct-03 www.vishay.com 1 dual p-channel 12-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 0.015 @ v gs = ? 4.5 v ? 12.8 ? 12 0.019 @ v gs = ? 2.5 v ? 11.4 0.024 @ v gs = ? 1.8 v ? 10.1 1 2 3 4 5 6 7 8 s1 g1 s2 g2 d1 d1 d2 d2 6.15 mm 5.15 mm bottom view powerpak so-8 s 1 g 1 d 1 p-channel mosfet s 2 g 2 d 2 p-channel mosfet ordering information: SI7973DP-t1 absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds ? 12 v gate-source voltage v gs 8 v continuous drain current (t j = 150 c) a t a = 25 c i d ? 12.8 ? 8.2 c on ti nuous d ra i n c urren t (t j = 150 c) a t a = 85 c i d ? 9.2 ? 5.9 a pulsed drain current i dm ? 30 a continuous source current (diode conduction) a i s ? 2.9 ? 1.2 maximum power dissipation a t a = 25 c p d 3.5 1.4 w maximum power dissipation a t a = 85 c p d 1.9 0.8 w operating junction and storage temperature range t j , t stg ? 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 10 sec r 26 35 maximum junction-to-ambient a steady state r thja 60 85 c/w maximum junction-to-case steady state r thjc 2.2 2.7 c/w notes a. surface mounted on 1? x 1? fr4 board.
SI7973DP vishay siliconix new product www.vishay.com 2 document number: 72428 s-32129?rev. a, 27-oct-03 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = ? 600 a ? 0.40 ? 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = ? 12 v, v gs = 0 v ? 1 a zero gate voltage drain current i dss v ds = ? 12 v, v gs = 0 v, t j = 85 c ? 5 a on-state drain current a i d(on) v ds ? 5 v, v gs = ? 4.5 v ? 30 a v gs = ? 4.5 v, i d = ? 12.8 a 0.012 0.015 drain-source on-state resistance a r ds(on) v gs = ? 2.5 v, i d = ? 11.4 a 0.015 0.019 ds(on) v gs = ? 1.8 v, i d = ? 4.2 a 0.019 0.024 forward transconductance a g fs v ds = ? 6 v, i d = ? 12.8 a 35 s diode forward voltage a v sd i s = ? 2.9 a, v gs = 0 v ? 0.8 ? 1.2 v dynamic b total gate charge q g 55 80 gate-source charge q gs v ds = ? 6 v, v gs = ? 4.5 v, i d = ? 12.8 a 8.1 nc gate-drain charge q gd 15.4 gate resistance r g f = 1 mhz 8 turn-on delay time t d(on) 40 60 rise time t r v dd = ? 6 v, r l = 6 72 110 turn-off delay time t d(off) v dd = ? 6 v , r l = 6 i d ? 1 a, v gen = ? 4.5 v, r g = 6 360 540 ns fall time t f 260 390 source-drain reverse recovery time t rr i f = ? 2.9 a, di/dt = 100 a/ s 166 250 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 5 10 15 20 25 30 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 5 10 15 20 25 30 012345 v gs = 5 thru 2 v 25 c t c = 125 c 1 v ? 55 c 1.5 v output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d
SI7973DP vishay siliconix new product document number: 72428 s-32129?rev. a, 27-oct-03 www.vishay.com 3 typical characteristics (25 c unless noted) v sd ? source-to-drain voltage (v) 0.00 0.01 0.02 0.03 0.04 0.05 0.06 012345 ? on-resistance ( r ds(on) ) v gs ? gate-to-source voltage (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 0 1 2 3 4 5 0 102030405060 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 0 1000 2000 3000 4000 5000 6000 024681012 c rss c oss c iss v ds = 6 v i d = 12.8 a v gs = 4.5 v i d = 12.8 a v gs = 1.8 v gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? on-resistance ( r ds(on) ) i d ? drain current (a) capacitance on-resistance vs. junction t emperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) t j = 150 c t j = 25 c i d = 4.2 a 30 10 1 source-drain diode forward v oltage on-resistance vs. gate-to-source voltage ? source current (a) i s v gs = 2.5 v v gs = 4.5 v i d = 13 a
SI7973DP vishay siliconix new product www.vishay.com 4 document number: 72428 s-32129?rev. a, 27-oct-03 typical characteristics (25 c unless noted) 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 65 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm ? 0.2 ? 0.1 0.0 0.1 0.2 0.3 0.4 ? 50 ? 25 0 25 50 75 100 125 150 i d = 600 a threshold voltage variance (v) v gs(th) t j ? temperature ( c) safe operating area, junction-t o-ambient v ds ? drain-to-source voltage (v) 100 1 0.1 1 10 100 0.01 10 t a = 25 c single pulse ? drain current (a) i d p(t) = 10 dc 0.1 i dm limited i d(on) limited r ds(on) limited bv dss limited p(t) = 1 p(t) = 0.1 p(t) = 0.01 p(t) = 0.001 0 10 50 power (w) single pulse power, junction-to-ambient time (sec) 30 40 0.1 600 1 0.01 0.001 20 10 100
SI7973DP vishay siliconix new product document number: 72428 s-32129?rev. a, 27-oct-03 www.vishay.com 5 typical characteristics (25 c unless noted) 10 ? 3 10 ? 2 1 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance
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